BSS139 TRANSISTOR MOSFET N 0.04A 250V

Parameter Symbol Conditions Unit
Continuous drain current I D T A=25 °C 0.10 A
T A=70 °C 0.08
Pulsed drain current I D,pulse T A=25 °C 0.4
Reverse diode dv /dt dv /dt
I D=0.1 A,V DS=200 V,
di /dt =200 A/μs,
T j,max=150 °C
6 kV/μs
Gate source voltage V GS ±20 V
ESD class
(JESD22-A114-HBM)
0 (<250V)
Power dissipation P tot T A=25 °C 0.36 W
Operating and storage temperature T j, T stg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56