IRFR5410TRLPBF MOSFET, CANAL P, 100V, 13A, TO252AA

Transistor Polarity: Channel P
Continuous Drain Current Id: -13A
Drain-Source Voltage (Vds): -100V
Resistance in Conductor State Rds (on): 0.205ohm
Vens Test Voltage Rds (on): -10V
Threshold Voltage Vgs: -4V
Power Dissipation Pd: 66W
Transistor encapsulation: TO-252AA
Number of Pins: 3Pines
Max Operating Temperature: 150 ° C
Product Range: HEXFET Series
Level of Sensitivity to Moisture (MSL): MSL 1 - Unlimited