
Single Bipolar Junction Transistor,
NPN, 230 V, 30 MHz, 150 W, 15 A, 160 hFE
Voltage from Collector to Emitter V (br) ceo: 230V
Power Dissipation Pd: 150W
Transistor Encapsulation: TO-3P
DC Current Gain hFE: 160hFE
Max Operating Temperature: 150 ° C
Transition Frequency ft: 30MHz
Transistor Polarity: NPN
Number of Pins: 3Pines
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Single Bipolar Junction Transistor,
NPN, 230 V, 30 MHz, 150 W, 15 A, 160 hFE