SI9407BDY-T1-G3, MOSFET, CH P, 60V,4.7A

Transistor, Polarity: Channel P 
Intensity Continuous
Drain Id: -4.7A Voltage Drain / Source (Vds): - 60V 
Resistance in ON state (Rds): 0.1ohm 
Voltage Measuring Vgs Rds (on): - 10V 
Voltage Threshold Vgs: -3V 
Power Dissipation Pd: 5W 
Transistor Design: SOIC Male 
Number of Contacts: 8Pines 
Max. Working Temperature: 150ºC