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HGTG20N60A4D TRANSISTER IBGT TO247
€7.83
Tax included
Single Transistor IGBT, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 Pins
The HGTG20N60A4 is an IGBT of 600V N-channel with hyper-fast anti-parallel diode. The SMPS series includes the IGBT family of high voltage switching with MOS gate. IGBT combines the best functions of bipolar transistors and MOSFET. This device has the high input impedance of a MOSFET and the low loss in the conductive state of a bipolar transistor. It offers lower conduction loss and switching loss to design reliable and high efficiency systems. Fairchild an exhaustive range of IGBT devices through various process technologies from 300V to more than 1200V. The optimization of the manufacturing process results in better control and repeatability of the upper structure, which provides more precise specifications and better EMI performance. This product is of general use and suitable for different applications.
Fall time from 55ns to TJ = 125 ° C
Fall time from 55ns to TJ = 125 ° C
1095112
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Single Transistor IGBT, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 Pins