HGTP12N60A4D IGBT, TO-220, 12n60

IGBT, TO-220 DC Collector Current: 54A Emitter Collector Voltage Vces: 2.7V Pd Power Dissipation: 167W Collector Emitter Voltage V (br) ceo: 600V Transistor Design: TO-220AB No. of Contacts: 3 Max Working Temperature: 150 ° C Moisture Sensitivity Level (MSL): - Substance of Extremely Concerning (SVHC): No SVHC (16-Dec-2013) Pulsed Current Icm: 96A Max Power Dissipation: 167W Continuous Ic Intensity at Max: 54A No. of Transistors: 1 Working Temperature Range: -55 ° C to + 150 ° C Full Power Temperature: 25 ° C Min Working Temperature: -55 ° C Voltage Vces: 600V Descent Time tf: 18ns Rise Time: 8ns Termination Type: Through Hole Transistor Type: IGBT Transistor, Polarity: Channel N