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IRF540NPBF, MOSFET, N, 100V, 33A, TO220
€1.78
Tax included
Transister, Polarity Channel N
Continuous Drain Intensity Id 33A
Drain / Source Voltage (Vds) 100V
Resistance in ON state (Rds) 0.044ohm
Voltage Vgs Measuring Rds (on) 10V
Voltage threshold Vgs 4V
Power Dissipation Pd 130W
TO-220AB Transistor Design
No. of Contacts Male 3Pins
Max Working Temperature 175 ° C
Drain to source voltage Vds is 100Vl IRF540NPBF de International Rectifier 100V es solo canal N HEXFET MOSFET de potencia en el paquete TO - 220AB .
Este MOSFET características extremadamente bajo de la resistencia por unidad de superficie de silicio,
calificación dinámico dv / dt , rugoso de conmutación , rápido y totalmente avalancha clasificar como resultado,
MOSFET de potencia son bien conocidos para proporcionar extremadamente eficiencia y la fiabilidad
que se puede utilizar en una amplia variedad de aplicaciones.
Puerta a la tensión de la fuente es de ± 20V
Sobre la resistencia RDS (on ) de 44mohm en Vgs de 10V
La disipación de potencia de 130W Pd a 25 ° C
Corriente continua identificación de 33A a 10V Vgs y 25 ° C
Rango de temperatura de funcionamiento en el empalme de -55 ° C a 175 ° C
8648298
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Transister, Polarity Channel N
Continuous Drain Intensity Id 33A
Drain / Source Voltage (Vds) 100V
Resistance in ON state (Rds) 0.044ohm
Voltage Vgs Measuring Rds (on) 10V
Voltage threshold Vgs 4V
Power Dissipation Pd 130W
TO-220AB Transistor Design
No. of Contacts Male 3Pins
Max Working Temperature 175 ° C
Drain to source voltage Vds is 100V