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IRFB4620PBF MOSFET TRANSISTOR
€4.74
Tax included
N channel, 200 V, 25 A, 0.06 ohm, TO-220AB
The IRFB4620PBF is a single HEXFET® N-channel power MOSFET that offers improved gate robustness, avalanche, and dynamic dV/dt capability. It is suitable for high efficiency synchronous rectification in SMPS, hard switching and high frequency circuits. Fully characterized capacitance and avalanche SOA Enhanced diode body dv/dt and di/dt capability.
Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 25A Drain-Source Voltage (Vds): 200V Conductive State Resistance Rds(on): 0.06ohm Drain-Source Resistance in Conductive State: 0.06ohm Test Voltage Rds(on): 10V Transistor Mounting: Through Hole Max. Gate-Source Threshold Voltage: 3V Power Dissipation Pd: 144W Transistor Package: TO-220AB Power Dissipation: 144W Number of Pins: 3Pins Max. Operating Temperature: 175°C
1688597
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N channel, 200 V, 25 A, 0.06 ohm, TO-220AB