

Power MOSFET Transistor, N-Channel, 100 V, 192 A, 0.0035 ohm, TO-220AB, Through Hole
MOSFET suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/AC inverters , DC/DC and AC/DC converters.
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 192A Drain-Source Voltage (Vds): 100V Resistance in Conducting State Rds(on): 0.0035ohm Drain-Source Resistance in Conducting State: 0.0035ohm Test Voltage Rds(on): 10V Transistor Mount: Through Hole Max Gate-Source Threshold Voltage: 4V Pd Power Dissipation: 441W Transistor Package: TO-220AB Power Dissipation: 441W Pin Number: 3Pins Max Operating Temperature: 175°C Product Range: StrongIRFET, HEXFET
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Power MOSFET Transistor, N-Channel, 100 V, 192 A, 0.0035 ohm, TO-220AB, Through Hole