The IRFZ34NPBF is a 55V single N-channel HEXFET® power MOSFET featuring extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
Channel Type: N Channel Transistor Polarity: N Channel Drain-Source Voltage (Vds): 55V Continuous Drain Current Id: 29A Resistance in Conductive State Rds(on): 0.04ohm Drain-Source Resistance in Conducting State: 0.04ohm Transistor Package: TO-220AB Transistor Mount: Through Hole Test Voltage Rds(on): 10V Max Gate-Source Threshold Voltage: 4V Pd Power Dissipation: 68W Power Dissipation: 68W Pin Number: 3Pins Max Operating Temperature: 175°C