
IRF3710 Power MOSFET, HEXFET®, N-Channel, 100 V, 59 A, 0.014 ohm, TO-263 (D2PAK), Surface Mount
Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 59A Drain-Source Voltage (Vds): 100V Resistance in Conductive State Rds(on): 0.014ohm Drain-Source Resistance in Conducting State: 0.014ohm Transistor Package: TO-263 (D2PAK) Test Voltage Rds(on): 10V Transistor Mount: Surface Mount Max Gate-Source Threshold Voltage: 4V Pd Power Dissipation: 160W Power Dissipation: 160W Pin Number: 3Pins Max Operating Temperature: 175°C Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
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IRF3710 Power MOSFET, HEXFET®, N-Channel, 100 V, 59 A, 0.014 ohm, TO-263 (D2PAK), Surface Mount