RFD14N05LSM MOSFET N, LOGIC, D-PAK

The RFD14N05LSM is a N-channel logic level Power MOSFET produced using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.

Transistor Polarity: N Channel Continuous Drain Current Id: 14A Drain-Source Voltage (Vds): 50V On-State Resistance Rds(on):0.1ohm Test Voltage Vgs Rds(on): 5V Transistor Package: TO-252 (DPAK) Threshold voltage Vgs: 2V Transistor Mounting: Surface Mount Power Dissipation Pd: 48W Number of Pins: 3Pins Max Operating Temperature: 175°C