RFD14N05L MOSFET N, LOGIC

The RFD14N05L is a through hole, 50V N channel logic level power MSOFET in TO-251AA package. Transistor is produced using megaFETprocess uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance MOSFET has an special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Typical applications are switching regulators, switching converters, motor drivers and relay drivers.

Transistor Polarity: N Channel Drain-Source Voltage (Vds): 50V Continuous Drain Current Id: 14A On-State Resistance Rds(on): 0.1ohm Transistor Package: TO-251AA Transistor Mounting: Through Hole Test Voltage Vgs Rds(on): 5V Threshold voltage Vgs: 2V Power Dissipation Pd: 48W Number of Pins: 3Pins Max Operating Temperature: 175°C