FDV304P MOSFET, P, -25V, -0.46, SOT-23

The Fairchild FDV303N is a P-channel Logic Level Enhanced Mode Digital FET in a surface mount SOT-23 package. This device features high cell density and specialized DMOS technology to minimize resistance in the driving state and maintain door control low voltage conditions. It offers excellent conductive resistance even at gate control voltages as low as 2.5V. FDV303N is designed for battery powered applications such as laptops, mobile phones, and computers.

    Very low level door control requirements, allowing direct operation on 3V circuits
    Drain-to-Source Voltage (Vds) -25V
    Door-to-source voltage -8V
    Continuous Drain Current (Id) -460mA
    350mW Power Dissipation (PD)
    Low resistance in conduction state from 1.22ohm to Vgs -2,7V
    Operating temperature range from -55 ° C to 150 ° C

Transistor Polarity: Channel P
Drain-Source Voltage (Vds): 25V
Continuous Drain Current Id: 460mA
Conductor State Resistance Rds (on): 1.22ohm
Transistor Package: SOT-23
Transistor Mount: Surface Mount
Test Voltage Vgs Rds (on): 2.7V
Threshold Voltage Vgs: 860mV
Power Dissipation Pd: 350mW
Number of Pins: 3Pines
Max Operating Temperature: 150 ° C
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited