
IRF1310 Power MOSFET, Channel N, 100V, 42A, 0.036 ohm, TO-263AB, Surface Mount
Transistor Polarity: Channel N
Drain-Source Voltage (Vds): 100V
Continuous Drainage Current Id: 42A
Conductor Resistance Rds (on): 0.036ohm
Transistor Encapsulation: TO-263AB
Transistor Mount: Surface Mount
Test Vgs Voltage Rds (on): 10V
Vgs Threshold Voltage: 4V
Power Dissipation Pd: 160W
Number of Pins: 3 Pins
Max Operating Temperature: 175 ° C
Product Range: HEXFET Series
Humidity Sensitivity Level (MSL): MSL 1 - Unlimited
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IRF1310 Power MOSFET, Channel N, 100V, 42A, 0.036 ohm, TO-263AB, Surface Mount