

The STD2NK90ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Extremely high dV/dt capability
100% Avalanche tested
Improved ESD capability
Very low intrinsic capacitance
Very good manufacturing repeatabilit
Transistor Polarity: Channel N
Continuous Drain Current Id: 2.1A
Drain-Source Voltage (Vds): 900V
Resistance in Conductor State Rds (on): 5ohm
Voltage Test Vgs Rds (on): 10V
Threshold Voltage Vgs: 3.75V
Power Dissipation Pd: 70W
Encapsulation of the Transistor: TO-252
Number of Pins: 3Pines
Max Operating Temperature: 150 ° C
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