The IRFB4115PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Halogen-free
Transistor Polarity: Channel N Continuous Drain Current Id: 62A Drain-Source Voltage (Vds): 150V Resistance in Conductor State Rds (on): 0.0093ohm Vens Test Voltage Rds (on): 20V Threshold Voltage Vgs: 5V Power Dissipation Pd: 380W Encapsulation of the Transistor: TO-220AB Number of Pins: 3Pines Max Operating Temperature: 175 ° C