
Single Transistor IGBT, 17 A, 1.95 V, 45 W, 600 V, TO-220FP, 3 Pins
The IRG4IBC30UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes.
Tighter parameter distribution
Simplified assembly
High efficiency and power density
HEXFRED™ anti-parallel diode minimizes switching losses and EMI
4.8mm Creepage distance to heat sink