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DS1225AD-150IND+ NON-VOLATILE SRAM
Substitute for DS1225Y-150+. NVSRAM, 64Kbit, 8K x 8bit, Read/Write 150ns, Parallel, 4.75V to 5.25V, EDIP-28
The DS1225AD-150IND+ is a 64K non-volatile SRAM in a 28-pin EDIP package. It is a 65,536-bit SRAM, totally static and non-volatile, organized in 8192 8-bit words. Each non-volatile SRAM integrates an integrated lithium power supply and control circuitry for constant VCC monitoring to detect out-of-tolerance conditions. When such a condition occurs, the lithium power supply is automatically turned on and write protection is unconditionally activated to prevent data corruption. The NV SRAM can be used in place of existing 8K x 8 SRAMs and fits directly into the popular bytewide 28-pin DIP package. The device matches the pin layout of the 2764 EPROM and 2864 EEPROM, allowing direct replacement while improving performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for interconnection with the microprocessor. Supply voltage range from 4.5V to 5.5V Operating temperature range -40°C to +85°C Data automatically protected during power loss Direct replacement for EEPROM or 8K x 8 volatile static RAM Unlimited write cycles Low power CMOS Read and write access time is 150ns Lithium power source disconnects to maintain coolness until power is applied for the first time Write protection voltage is 4.37V Operating current is 85 mA.
Memory Size: 64Kbit Memory Density: 64Kbit Memory Organization: 8K x 8bit Memory Configuration: 8K x 8bit Read Access Time: 150ns Write Access Time: 150ns Min. Supply Voltage: 4.5V Max. Supply Voltage: 5.5V Memory Encapsulation: EDIP Number of Pins: 28Pins Circuit Interface Type: Parallel Interfaces: Parallel Min. Working Temperature: -40°C Circuit Mounting: Through Hole Max. Operating Temperature: 85°C
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