

Dual MOSFET Controller, High Side and Low Side, 10V-20V Power, 500mAout, 150ns Delay
The IR2111SPBF is a high-speed and high-voltage MOSFET and IGBT half-bridge power controller with high and low-dependent referenced output channels designed for medium-bridge applications. Patented HVIC and CMOS interlocking immune technologies that allow robust monolithic construction. The logic input is compatible with standard CMOS outputs. The output controller has a high pulse current buffer stage, designed for minimal driver cross-driving. Internal extinction time provided to avoid overloads in the middle exit bridge. The floating channel can be used to control a MOSFET or IGBT of N-channel power in the high-side configuration operating at up to 600V.
Floating channel designed for start operation
Tolerant to transient negative voltages (dV / dt immunity)
Undervoltage blocking for both channels
Inputs triggered by Schmitt CMOS with polarization resistance
Balanced propagation delay for both channels
Extinction time set internally
High side output in phase with input
Get our latest news and special sales
Dual MOSFET Controller, High Side and Low Side, 10V-20V Power, 500mAout, 150ns Delay